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| Datasheet File OCR Text: |
| NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large- signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz. D Specified 12.5 Volt, 50MHz Characteristics Output Power = 40 Watts Minimum Gain = 7.5dB Efficiency = 50% Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571mW/C Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperatures Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55C/W Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common-Emitter Amplifier Power Gain Collector Efficiency GPE POUT = 40W, VCC = 12.5V, f = 50MHz 7.5 50 - - - - dB % Cob VCB = 12.5V, IE = 0, f = 0.1 to 1.0MHz - 180 230 pF hFE VCE = 5V, IC = 2.4A 3 7 - V(BR)CEO IC = 200mA, IB = 0, Note 2 V(BR)CES IC = 100mA, VBE = 0, Note 2 V(BR)EBO IC = 0, IE = 10mA ICBO ICES VCB = 15V, IE = 0 VCB = 15V, IE = 0, TA = +125C 24 48 4 - - - - - - - - - - 1.0 10 V V V mA mA Symbol Test Conditions Min Typ Max Unit Note 2. Pulsed through 25mH inductor. 1.065 (27.05) Max .525 (13.35) C .225 (5.72) E 45 E .112 (2.85) B .090 (2.28) .500 (12.7) Dia .260 (6.6) .395 (10.05) .420 (10.66) Dia .115 (2.92) 10-32 NC-3A Wrench Flat .075 (1.9) |
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